Semiconductor device and method for manufacturing the same

A method for manufacturing a semiconductor device comprising:

• forming a first insulating film on a first substrate;
• forming a contact that extends into the first insulating film;
• forming a first conductive film on the contact;
• forming a stacked body on the first conductive film including alternately stacked insulating films and sacrificial films;
• forming a plurality of holes that penetrates the stacked body in a stacked direction and reaches the first conductive film;
• forming a charge storage member and a semiconductor member in the plurality of holes;
• replacing the sacrificial films with a plurality of first electrode films to thereby form a stacked body of the plurality of first electrode films, the plurality of first electrode films stacked so as to be insulated from each other;
• removing the first substrate from the first insulating film thereby exposing the contact;
• and
• forming a second conductive film on the first insulating film and the contact.

A method for manufacturing a semiconductor device comprising:

• forming a first insulating film on a first substrate;
• forming a first conductive film on the first insulating film;
• forming a contact that penetrates the first insulating film and electrically connects the first insulating film and the first substrate;
• forming, on the first conductive film, a stacked body including alternating insulating films and sacrificial films;
• forming a plurality of holes that penetrate the stacked body in a stacking direction, the plurality of holes extending to the first conductive film;
• forming a charge storage member and a semiconductor member in the plurality of holes;
• replacing the plurality of sacrificial films with a plurality of first electrode films thereby forming a stacked body of the plurality of first electrode films that are insulated from each other;
• removing the first substrate from the first insulating film to expose the contact;
• and
• forming a second conductive film on the first insulating film and the contact.