US 2022/0069090 A1Published application

Compound semiconductor substrate

AssigneeAir Water Inc.

InventorsHiroki SUZUKI, Sumito OUCHI, Mitsuhisa NARUKAWA, Keisuke KAWAMURA

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Abstract

A compound semiconductor substrate that can improve in-plane uniformity of current-voltage characteristics in the vertical direction is provided. A compound semiconductor substrate includes a center and an edge which is 71.2 millimeters away from the center when viewed in a plane. When a film thickness of the GaN layer at the center of the compound semiconductor substrate is W1 and a film thickness of the CaN layer at the edge is W2, film thickness error ΔW represented by ΔW (%)=W1−W2|*100/W1 is greater than 0 and 8% or less. The average carbon concentration in the depth direction at a center of the CaN layer is 3*1018 pieces/cm3 or more and 5*1020 pieces/cm3 or less. When a carbon concentration at a center position of the depth direction at the center of the GaN layer is concentration C1 and a carbon concentration at a center position of the depth direction at the edge of the GaN layer is concentration C2, concentration error ΔC represented by ΔC (%)=|C1−C2*100/C1 is 0 or more and 50% or less.

Claims8

Dependent claims

A compound semiconductor substrate with a center and an edge which is 71.2 millimeters away from the center when viewed in a plane comprising:

a Si substrate,
a buffer layer containing AlN formed on a top surface side of the Si substrate,
a nitride semiconductor layer containing Al formed on a top surface side of the buffer layer, and
a GaN layer formed on a top surface side of the nitride semiconductor layer, wherein
when a film thickness of the GaN layer at the center is film thickness W1 and a film thickness of the GaN layer at the edge is film thickness W2, film thickness error ΔW represented by ΔW(%)=|W1−W2|*100/W1 is greater than 0 and 8% or less,
an average carbon concentration of a depth direction at the center of the GaN layer is 3*1018 pieces/cm3 or more and 5*1020 piece/cm3 or less, and
when a carbon concentration at a center position of a depth direction at the center of the GaN layer is concentration C1, and a carbon concentration at a center position of the depth direction in the edge of the GaN layer is concentration C2, concentration error ΔC represented by ΔC(%)=|C1−C2|*100/C1 is 0 or more and 50% or less.

4 more elements

Dependencies are inferred from the claim text.