Back to results
US 2022/0069089 A1Published application
Silicon carbide semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorsYasuyuki KAWADA, Aki TAKIGAWA
Life of this patent
Estimating the term…
Abstract
The silicon carbide semiconductor device includes: a silicon carbide layer; a silicon dioxide layer provided above the silicon carbide layer and containing nitrogen; and a transition region arranged between the silicon carbide layer and the silicon dioxide layer, and containing carbon, oxygen, and nitrogen, wherein the maximum nitrogen concentration in the transition region is 1.0×1020 cm−3 or higher. The maximum nitrogen concentration in the transition region is five or more times higher than the maximum nitrogen concentration in the silicon dioxide layer.
Claims20
A silicon carbide semiconductor device comprising:
- a silicon carbide layer;
- a silicon dioxide layer provided above the silicon carbide layer and containing nitrogen;
- and
- a transition region arranged between the silicon carbide layer and the silicon dioxide layer, and containing carbon, oxygen, and nitrogen,
- wherein the maximum nitrogen concentration in the transition region is 1.0×1020 cm−3 or higher.
2 more elements
Dependencies are inferred from the claim text.