SiC SEMICONDUCTOR DEVICE
AssigneeRohm Co., Ltd.
InventorsYuki NAKANO, Kenji YAMAMOTO, Seigo MORI
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Abstract
An SiC semiconductor device includes an SiC semiconductor layer of a first conductivity type having a main surface, a source trench formed in the main surface and having a side wall and a bottom wall, a source electrode embedded in the source trench and having a side wall contact portion in contact with a region of the side wall of the source trench at an opening side of the source trench, a body region of a second conductivity type formed in a region of a surface layer portion of the main surface along the source trench, and a source region of the first conductivity type electrically connected to the side wall contact portion of the source electrode in a surface layer portion of the body region.
Claims24
An SiC semiconductor device comprising:
- an SiC semiconductor layer of a first conductivity type having a main surface;
- a source trench formed in the main surface and having a side wall and a bottom wall;
- a source electrode embedded in the source trench and having a side wall contact portion in contact with a region of the side wall of the source trench at an opening side of the source trench;
- a body region of a second conductivity type formed in a region of a surface layer portion of the main surface along the source trench;
- and
- a source region of the first conductivity type electrically connected to the side wall contact portion of the source electrode in a surface layer portion of the body region.
Dependencies are inferred from the claim text.