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US 2022/0069085 A1Published application
Method for fabricating semiconductor structure including the substrate structure
AssigneeVanguard International Semiconductor Corporation
InventorsYung-Fong LIN, Cheng-Tao CHOU
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Abstract
A substrate structure and a method for fabricating a semiconductor structure including the substrate structure are provided. The substrate structure includes a substrate, a bow adjustment layer, and a silicon layer. The bow adjustment layer is on the top surface of the substrate. The silicon layer is on the bow adjustment layer. The substrate structure has a total bow value, and the total vow value is from −20 μm to −40 μm.
Claims13
A method for fabricating a semiconductor structure, comprising:
- forming a substrate structure, comprising:
- providing a ceramic substrate;
- and
- forming a bow adjustment layer in direct contact with a top surface of the ceramic substrate to adjust a total bow value of the substrate structure to be less than 50 μm, wherein the ceramic substrate has a positive bow value when the bow adjustment layer has a negative bow value, and the ceramic substrate has a negative bow value when the bow adjustment layer has a positive bow value;
- and
- forming a GaN-based semiconductor layer over the substrate structure.
3 more elements
Dependencies are inferred from the claim text.