Power semiconductor device and method of fabricating the same

A method of fabricating a power semiconductor device, the method comprising:

• forming a drift region in a semiconductor layer of silicon carbide (SiC), wherein the drift region includes a protrusion and has a first conductivity type;
• forming a well region in the semiconductor layer on the drift region, wherein the well region has a second conductivity type;
• forming a source region in the semiconductor layer on the well region, wherein the source region has the first conductivity type;
• forming at least one trench recessed into the semiconductor layer, wherein the at least one trench penetrates a part of the source region from a surface of the semiconductor layer and is in contact with the protrusion;
• forming a gate insulating layer at least on an inner surface of the at least one trench;
• and
• forming at least one gate electrode layer on the gate insulating layer so as to bury the at least one trench,
• wherein the protrusion is in contact with a bottom surface of the at least one trench, and
• wherein the well region is formed in the semiconductor layer, and is in contact with the drift region while surrounding side surfaces and bottom edges of the at least one trench.