Integrated Assemblies and Methods of Forming Integrated Assemblies

An integrated assembly comprising an access device between a storage element and a conductive structure;

• the access device comprising:
• an active region comprising semiconductor material;
• the active region comprising a first region, a third region offset from the first region, and a second region between the first and third regions;
• the first region having an inner edge adjacent the second region and an outer edge distal from the second region;
• the third region having an inner edge adjacent the second region and an outer edge distal from the second region;
• a gating structure operatively adjacent the second region;
• a first carrier-concentration-gradient within the first region, the first carrier-concentration-gradient increasing along a direction from the inner edge of the first region to the outer edge of the first region;
• and
• a second carrier-concentration-gradient within the third region, the second carrier-concentration-gradient increasing along a direction from the inner edge of the third region to the outer edge of the third region.

A method of forming an integrated assembly, comprising:

• forming a structure comprising semiconductor material;
• the structure having a second region offset from a first region;
• the first region having an inner edge adjacent the second region and having an outer edge distal from the second region;
• incorporating a modifier material into the semiconductor material, the modifier material comprising one or both of carbon and boron and being provided in a concentration gradient which increases from the outer edge to the inner edge;
• and
• subjecting the semiconductor material to reducing conditions to impose a carrier-concentration-gradient into the semiconductor material, the carrier-concentration-gradient being substantially inverse to the concentration gradient of the modifier material.