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AssigneeParcan Nanotech Co., Ltd.
InventorsIvo RANGELOW, Larisa CHAKAROV, Xiang-Qian ZHOU, Dimitre KARPUZOV
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The present invention is related to a substrate (10) for a controlled implantation of ions (80) into a bulk (20), the substrate (10) comprising the bulk (20) composed of a crystalline first material (70), the bulk (20) comprising an implantation region (28) and a surface (22), wherein the implantation region (28) is located within the bulk (20) and along an implantation direction (82) at an implantation depth (26) below an implantation area (24) on the surface (10) of the bulk (20). Further, the present invention is related to a method of preparing a substrate (10) for a controlled implantation of ions (80) into a bulk (20), preferably the aforementioned substrate (10), the substrate (10) comprising the bulk (20) composed of a crystalline first material (70), the bulk (20) comprising an implantation region (28) and the surface (22), wherein the implantation region (28) is located within the bulk (20) and along an implantation direction (82) at an implantation depth (26) below an implantation area (24) on the surface (22) of the bulk (20).
Substrate for a controlled implantation of ions into a bulk, the substrate comprising the bulk composed of a crystalline first material, the bulk comprising an implantation region and a surface, wherein the implantation region is located within the bulk and along an implantation direction at an implantation depth below an implantation area on the surface of the bulk,
Method of preparing a substrate for a controlled implantation of ions into a bulk, the substrate comprising the bulk composed of a crystalline first material, the bulk comprising an implantation region and a surface, wherein the implantation region is located within the bulk and along an implantation direction at an implantation depth below an implantation area on the surface of the bulk,
Dependencies are inferred from the claim text.