Super junction semiconductor device and method of manufacturing the same

A super junction semiconductor device comprising:

• a substrate of a first conductive type, the substrate including an active region, a peripheral region surrounding the active region and a transition region interposed between the active region and the peripheral region;
• an epitaxial layer disposed on the substrate, the epitaxial layer having the first conductive type;
• a plurality of pillars spaced apart within the epitaxial layer, each pillar extending in a vertical direction;
• a plurality of gate structures disposed on the epitaxial layer in the active region, each gate structure extending across the epitaxial layer and the pillars in a horizontal direction;
• a reverse recovery layer of a second conductive type, the reverse recovery layer disposed on both the pillars and the epitaxial layer in the transition region to distribute a reverse recovery current;
• and
• at least one high concentration region, the high concentration region surrounding an upper portion of a corresponding pillar, the corresponding pillar selected from one of the plurality of pillars in the peripheral region and the high concentration region having a horizontal width greater than that of the corresponding pillar.