A semiconductor device, comprising:
- a semiconductor substrate containing a semiconductor having a bandgap wider than a bandgap of silicon, the semiconductor substrate having a first main surface and a second main surface opposite to each other;
- a first semiconductor region of a first conductivity type, provided in the semiconductor substrate, at the first main surface of the semiconductor substrate;
- a plurality of second semiconductor regions of a second conductivity type, selectively provided between the first main surface of the semiconductor substrate and the first semiconductor region;
- a plurality of third semiconductor regions of the first conductivity type, selectively provided between the first main surface of the semiconductor substrate and the second semiconductor regions, the third semiconductor regions having an impurity concentration higher than an impurity concentration of the first semiconductor region;
- a plurality of trenches penetrating through the third semiconductor regions and the second semiconductor regions, and reaching the first semiconductor region;
- a plurality of gate electrodes that are respectively provided in the trenches via a respective one of a plurality of gate insulating films;
- a plurality of first high-concentration regions of the second conductivity type, selectively provided in the first semiconductor region, the first high-concentration regions, in a depth direction, respectively facing and surrounding bottoms of the trenches, the first high-concentration regions having an impurity concentration higher than an impurity concentration of the second semiconductor regions;
- a plurality of second high-concentration regions of the second conductivity type, selectively provided in the first semiconductor region, separate from the first high-concentration regions and the trenches, and in contact with the second semiconductor regions, bottoms of the second high-concentration regions being located at positions deeper from the second semiconductor regions than are positions of the bottoms of the trenches, the second high-concentration regions having an impurity concentration higher than the impurity concentration of the second semiconductor regions;
- a first electrode provided on the first main surface of the semiconductor substrate, in ohmic contact with the third semiconductor regions between a first adjacent two of the trenches that are adjacent to each other;
- a first Schottky electrode provided on the first main surface of the semiconductor substrate, between a second adjacent two of the trenches that are adjacent each other, the first Schottky electrode electrically connected to the first electrode and forming a Schottky junction with the first semiconductor region;
- a plurality of fourth semiconductor regions of the second conductivity type, respectively provided between each of the second adjacent two of the trenches and the first semiconductor region, each fourth semiconductor region extending in the depth direction along a sidewall of said each of the second adjacent two of the trenches, from the first main surface toward the second main surface of the semiconductor substrate, and contacting a corresponding one of the first high-concentration regions;
- a plurality of fifth semiconductor regions of the second conductivity type respectively provided between respective ones of the fourth semiconductor regions and the first semiconductor region, each fifth semiconductor region being in contact with a respective one of the fourth semiconductor regions, the first semiconductor region and the first Schottky electrode;
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- a second electrode provided on the second main surface of the semiconductor substrate.