Organic light-emitting display device and method for manufacturing the same
AssigneeLG Display Co., Ltd.
InventorKiyoung JUNG
Life of this patent
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Abstract
Discussed is a display device capable of reducing a number of contact holes and thus improving a aperture ratio, in a structure in which a power line is branched so that power is supplied by the branch line to a thin-film transistor. Further, a method for manufacturing the same is discussed. To this end, in the branch line, a contact-hole is not formed adjacent to the driving thin-film transistor, while a contact-hole is formed only adjacent to the power line VDD/Ref. A dual line of the branch line composed of an active layer and a molybdenum-titanium layer extends from the contact-hole to the driving thin-film transistor, so that the power is supplied to the driving thin-film transistor through the molybdenum-titanium layer MoTi.
Claims17
An organic light-emitting display device comprising:
- a light-blocking layer disposed on a substrate;
- a buffer layer disposed on the light-blocking layer;
- an active layer disposed on the buffer layer;
- a first metal layer disposed on the active layer;
- and
- a gate insulating layer disposed on the first metal layer,
- wherein a contact-hole is formed in the first metal layer and the gate insulating layer and in an area of overlapping with the light-blocking layer, and
- wherein the active layer and the first metal layer extend from the contact-hole to a channel of a thin-film transistor.
A method for manufacturing an organic light-emitting display device, wherein the organic light-emitting display device includes a branch line which is branched from a power line for supplying power to a thin-film transistor,
- wherein the branch line connects the power line and the thin-film transistor to each other,
- wherein the thin-film transistor includes a source, a drain, a channel, and a gate electrode,
- wherein the method comprises:
- (a) forming a light-blocking layer on a substrate so that a portion of the substrate is exposed;
- (b) forming a buffer layer on the exposed portion of the substrate and a top face of the light-blocking layer;
- (c) forming an active layer and a first metal layer on the buffer layer;
- (d) forming a gate insulating layer on the active layer and the first metal layer;
- (e) forming a contact-hole passing through the first metal layer and the gate insulating layer in an area of overlapping with the light-blocking layer;
- and
- (f) forming a gate metal layer on the active layer, the first metal layer, and the gate insulating layer,
- wherein the first metal layer is contact with the gate metal layer in the contact-hole area, and
- wherein the active layer and the first metal layer extend from the contact-hole to the channel of the thin-film transistor.
Dependencies are inferred from the claim text.