Resistive memory elements having conductive islands embedded within the switching layer
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsDesmond Jia Jun Loy, Eng Huat Toh, Shyue Seng Tan
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Abstract
Structures for a resistive memory element and methods of forming a structure for a resistive memory element. The resistive memory element includes a first switching layer, a second switching layer, a conductive spacer, a first electrode, and a second electrode. The first switching layer includes a portion positioned between the first electrode and the conductive spacer, the second switching layer includes a portion positioned between the second electrode and the conductive spacer, and the conductive spacer is positioned between the portion of the first switching layer and the portion of the second switching layer.
Claims20
A structure comprising:
- a resistive memory element including a first switching layer, a second switching layer, a first conductive spacer, a first electrode, and a second electrode, the first switching layer including a first portion positioned between the first electrode and the first conductive spacer, the second switching layer including a first portion positioned between the second electrode and the first conductive spacer, and the first conductive spacer positioned between the first portion of the first switching layer and the first portion of the second switching layer.
A method of forming a structure for a resistive memory element, the method comprising:
- forming a first electrode;
- forming a first switching layer;
- forming a conductive spacer on the first switching layer;
- forming a second switching layer on the first switching layer and the conductive spacer;
- and
- forming a second electrode on the second switching layer,
- wherein the first switching layer includes a portion positioned between the first electrode and the conductive spacer, the second switching layer includes a portion positioned between the second electrode and the conductive spacer, and the conductive spacer is positioned between the first electrode and the second electrode.
Dependencies are inferred from the claim text.