Scheme of boosting adjustable ground level(s) of storage capacitor(s) of bjt pixel circuit(s) in pixel array circuit of image sensor apparatus

An image sensor apparatus, comprising:

• a pixel array circuit, comprising:
• a plurality of bipolar junction transistor (BJT) pixel circuits,
• a BJT pixel circuit comprising:
• a BJT transistor, having a base coupled to a photo detector, an emitter coupled to a shutter circuit, and a collector coupled to a reference ground level;
• the photo detector, having a first end coupled to the base of the BJT transistor and a second end coupled to the reference ground level, for generating a base current based on a light intensity of a light incident on the photo detector;
• the shutter circuit, coupled to the emitter of the BJT transistor, for controlling an exposure time of the photo detector according to a shutter signal;
• and
• a storage capacitor, coupled between the shutter circuit and an adjustable ground level different from the reference ground level, for storing image data captured by the photo detector;
• and
• a controlling circuit, coupled to the pixel array circuit, for dynamically adjusting the adjustable ground level of the each BJT pixel circuit for one or more times during the exposure time, wherein the adjustable ground level is boosted to be higher than the reference ground level;
• wherein both an adjustable ground level corresponding to the storage capacitor of the BJT pixel circuit and another adjustable ground level corresponding to another storage capacitor of another BJT pixel circuit are boosted at a specific timing, which is associated with the BJT pixel circuit when the light intensity of the light incident on the photo detector of the BJT pixel circuit is higher than the light intensity of the light incident on another photo detector of the another BJT pixel circuit.