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AssigneeGuangdong University of Technology
InventorsJianguo MA, Shaohua ZHOU
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The present disclosure discloses a terahertz detector based on a Schottky contact rasterization structure. THz response frequency points are adjusted by adjusting parameters (a width, length, region area, period and pattern form of a raster) of the Schottky contact rasterization structure (in the detector design stage, the rasterization structure parameters can be adjusted according to the actually required detection frequency points (single frequency point or multiple frequency points)), thereby realizing single-frequency detection or realizing that one detector supports the detection of multiple frequency points. The rasterization is introduced into the Schottky Barrier Diode, so that the rasterized Schottky contact resonates with the terahertz waves, the plasma resonance effect is enhanced, and the detection sensitivity is further improved.
A terahertz detector based on a Schottky contact rasterization structure, comprising an SBD with a Schottky contact rasterization structure, a bias voltage Vb1, a bias resistor Rb1, a DC blocking capacitor C1, a switch S1, a detector and readout circuit test switch and a readout circuit;
Dependencies are inferred from the claim text.