Complementary metal-oxide semiconductor image sensor, image processing method and electronic device

An image processing method applied to a Complementary Metal-Oxide Semiconductor image sensor (CIS), wherein the CIS comprises a color filter and a sub-wavelength pixel unit, the color filter comprises a first light filter unit corresponding to a first wavelength range, a second light filter unit corresponding to a second wavelength range, and a third light filter unit corresponding to a third wavelength range, the sub-wavelength pixel unit comprises a first photodiode (PD) column unit corresponding to the first wavelength range, a second PD column unit corresponding to the second wavelength range, and a third PD column unit corresponding to the third wavelength range, a first light-receiving surface of the first PD column unit, a second light-receiving surface of the second PD column unit, and a third light-receiving surface of the third PD column unit have equal area, first junction area of the first PD column unit, second junction area of the second PD column unit and third junction area of the third PD column unit are unequal, and the method comprises:

• absorbing and converting, through the first PD column unit, the second PD column unit and the third PD column unit, incident light to obtain an electrical signal corresponding to the incident light;
• obtaining, according to the electrical signal, primary data corresponding to the incident light;
• and
• performing graphic processing according to the primary data, to obtain an image corresponding to the incident light.

An electronic device, comprising a Complementary Metal-Oxide Semiconductor image sensor (CIS), wherein the CIS comprises:

• a color filter comprising a first light filter unit corresponding to a first wavelength range, a second light filter unit corresponding to a second wavelength range, and a third light filter unit corresponding to a third wavelength range;
• and
• a sub-wavelength pixel unit comprising a first photodiode (PD) column unit corresponding to the first wavelength range, a second PD column unit corresponding to the second wavelength range, and a third PD column unit corresponding to the third wavelength range;
• wherein a first light-receiving surface of the first PD column unit, a second light-receiving surface of the second PD column unit, and a third light-receiving surface of the third PD column unit have equal area, and first junction area of the first PD column unit, second junction area of the second PD column unit, and third junction area of the third PD column unit are unequal.