Array substrate, manufacturing method therefor and display panel
AssigneeHkc Corporation Limited
InventorsEn-Tsung CHO, FENGYUN YANG, Qionghua MO, YONG ZHANG
Life of this patent
Estimating the term…
Abstract
The present application discloses an array substrate, a manufacturing method therefor and a display panel. The manufacturing method for the array substrate includes steps of: forming a base layer; forming a semiconductor layer on the base layer; forming a metal layer on the semiconductor layer, where the upper surface of the metal layer contains a first nitride or a first oxide; etching the metal layer into a source/drain electrode; and forming a passivation layer on the source/drain electrode, where the passivation layer is a second nitride structure corresponding to the first nitride or a second oxide structure corresponding to the first oxide.
Claims19
A manufacturing method for an array substrate, comprising:
- forming a base layer;
- forming a semiconductor layer on the base layer;
- forming a metal layer on the semiconductor layer, wherein a upper surface of the metal layer comprises a first nitride or a first oxide;
- etching the metal layer into a source/drain electrode;
- and
- forming a passivation layer on the source/drain electrode, wherein the passivation layer is a second nitride structure corresponding to the first nitride or a second oxide structure corresponding to the first oxide.
An array substrate, comprising:
- a base layer;
- a semiconductor layer, disposed on the base layer;
- a metal layer, disposed on the semiconductor layer and etched into a source/drain electrode, wherein the upper surface of the metal layer contains a first nitride or a first oxide;
- and
- a passivation layer, disposed on the source/drain electrode, wherein the passivation layer is a second nitride structure corresponding to the first nitride or a second oxide structure corresponding to the first oxide.
A display panel, comprising a color filter (CF) substrate and an array substrate arranged oppositely, and a liquid crystal layer arranged between the CF substrate and the array substrate, wherein the array substrate comprises:
- a base layer;
- a semiconductor layer, disposed on the base layer;
- a metal layer, disposed on the semiconductor layer and etched into a source/drain electrode, wherein the upper surface of the metal layer contains a first nitride or a first oxide;
- and
- a passivation layer, disposed on the source/drain electrode, wherein the passivation layer is a second nitride structure corresponding to the first nitride or a second oxide structure corresponding to the first oxide.
Dependencies are inferred from the claim text.