Integrated Assemblies and Methods of Forming Integrated Assemblies

An integrated assembly, comprising:

• a stack of alternating conductive levels and insulative levels;
• cell-material-pillars passing through the stack;
• the cell-material-pillars being arranged within a configuration which includes a first memory-block-region and a second memory-block-region;
• memory cells comprising regions of the cell-material-pillars and being along the conductive levels;
• and
• a panel between the first and second memory-block-regions;
• the panel having a pair of opposing sidewalls in top-down view;
• the opposing sidewalls being substantially parallel to one another and having serpentine configurations along a horizontal direction.

A method of forming an integrated assembly, comprising:

• forming a first stack of alternating first and second tiers over a conductive structure;
• the first and second tiers comprising a first material and an insulative second material, respectively;
• forming first pillar openings to extend through the first stack, with the first pillar openings being arranged within a configuration which includes a first memory-block-region and a second memory-block-region, and forming a first slit opening to extend through the first stack and to be between the first and second memory-block-regions;
• forming a second stack of alternating third and fourth tiers over the first stack;
• the third and fourth tiers comprising a third material and an insulative fourth material, respectively;
• forming second pillar openings to extend through the second stack to the first pillar openings, and forming a second slit opening to extend through the second stack to the first slit opening;
• forming channel-material-pillars within the first and second pillar openings;
• the channel-material-pillars extending vertically through the first and second stacks and being electrically coupled with the conductive structure;
• replacing at least some of the first and third materials with one or more conductive materials to thereby convert the first and third tiers to first and second conductive levels, respectively;
• and
• forming a panel within the first and second slit openings;
• the panel extending vertically through the first and second stacks.