Semiconductor device and photomask

A semiconductor device comprising:

• a stacked body which is arranged in a first hierarchy, and in which a plurality of conductive layers are stacked via an insulating layer, the stacked body including a plurality of three-dimensionally arranged memory cells;
• a plurality of contacts which penetrate the stacked body in a stacking direction of the stacked body and are repeatedly arranged in a first direction along a plane of the first hierarchy;
• a plurality of wirings which are repeatedly arranged in the first direction in a second hierarchy that is a lower layer of the first hierarchy, and are each electrically connected to a corresponding contact among of the plurality of contacts;
• a peripheral circuit which is arranged in a lower layer of the second hierarchy and contributes to an operation of the plurality of memory cells;
• and
• a plurality of plugs which are repeatedly arranged in the first direction in a third hierarchy that is an upper layer of the first hierarchy, and are each electrically connected to a corresponding contact among of the plurality of contacts,
• wherein in a minimum unit of repetition of the contact, the wiring, and the plug, at least one of a first distance between geometric centers of the contact and the wiring and a second distance between geometric centers of the contact and the plug differs at a first position and a second position in the first direction, and a discontinuous point where a change tendency of the at least one of the first distance and the second distance is discontinuous is present between the first position and the second position, the change tendency keeping one of an increasing tendency and a decreasing tendency and not including the other of the increasing tendency and the decreasing tendency between the first position and the discontinuous point and between the discontinuous point and the second position.

A photomask comprising:

• a mask substrate;
• and
• first and second patterns arranged on the mask substrate,
• herein the first and second patterns are repeatedly arranged in a first direction along a plane of the mask substrate, and
• distance between geometric centers of the first and second patterns in a minimum unit of repetition of the first and second patterns differs at a first position and a second position in the first direction.