Methods for forming on-chip capacitor structures in semiconductor devices
AssigneeYangtze Memory Technologies Co., Ltd.
InventorLiang Chen
Life of this patent
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Abstract
Embodiments of semiconductor devices and methods for forming the same are disclosed. In an example, a method for forming a semiconductor device is disclosed. A first interlayer dielectric (ILD) layer is formed on a first side of a substrate. A plurality of first contacts each extending vertically through the first ILD layer and in contact with the substrate are formed. The substrate is thinned from a second side opposite to the first side of the substrate. A plurality of dielectric cuts each extending vertically through the thinned substrate are formed to separate the thinned substrate into a plurality of semiconductor blocks, such that the plurality of semiconductor blocks are in contact with the plurality of first contacts, respectively.
Claims20
A method for forming a semiconductor device, comprising:
- forming a first interlayer dielectric (ILD) layer on a first side of a substrate;
- forming a plurality of first contacts each extending vertically through the first ILD layer and in contact with the substrate;
- thinning the substrate from a second side opposite to the first side of the substrate;
- and
- forming a plurality of dielectric cuts each extending vertically through the thinned substrate to separate the thinned substrate into a plurality of semiconductor blocks, such that the plurality of semiconductor blocks are in contact with the plurality of first contacts, respectively.
A method for forming a semiconductor device, comprising:
- forming a first interlayer dielectric (ILD) layer on a first side of a substrate;
- forming a plurality of first contacts each extending vertically through the first ILD layer and in contact with the substrate;
- thinning the substrate from a second side opposite to the first side of the substrate;
- forming a second ILD layer on the second side of the thinned substrate;
- and
- forming a plurality of second contacts each extending vertically through the second ILD layer and the thinned substrate and in contact with the plurality of first contacts, respectively.
A method for operating a three-dimensional (3D) semiconductor device comprising a stack of a first interlayer dielectric (ILD) layer, a semiconductor layer, and a second IDL layer, comprising:
- simultaneously charging (i) a first capacitor by applying a voltage on a pair of first contacts each extending vertically through the first ILD layer, and (ii) at least one of a second capacitor by applying the voltage on a pair of portions of the semiconductor layer separated by a dielectric cut extending vertically through the semiconductor layer, or a third capacitor by applying the voltage on a pair of second contacts each extending vertically through the second ILD layer;
- and
- simultaneously supplying the voltage by the first capacitor and the at least one of the second capacitor or the third capacitor.
Dependencies are inferred from the claim text.