On-chip capacitor structures in semiconductor devices
AssigneeYangtze Memory Technologies Co., Ltd.
InventorLiang Chen
Life of this patent
Estimating the term…
Abstract
Embodiments of semiconductor devices and methods for forming the same are disclosed. In an example, a semiconductor device includes a semiconductor layer, a first interlayer dielectric (ILD) layer in contact with a first side of the semiconductor layer, a plurality of dielectric cuts each extending vertically through the semiconductor layer to separate the semiconductor layer into a plurality of semiconductor blocks, and a plurality of first contacts each extending vertically through the first ILD layer and in contact with the plurality of semiconductor blocks, respectively.
Claims20
A semiconductor device, comprising:
- a semiconductor layer;
- a first interlayer dielectric (ILD) layer in contact with a first side of the semiconductor layer;
- a plurality of dielectric cuts each extending vertically through the semiconductor layer to separate the semiconductor layer into a plurality of semiconductor blocks;
- and
- a plurality of first contacts each extending vertically through the first ILD layer and in contact with the plurality of semiconductor blocks, respectively.
A semiconductor device, comprising:
- a semiconductor layer;
- a first interlayer dielectric (ILD) layer in contact with a first side of the semiconductor layer;
- a plurality of first contacts each extending vertically through the first ILD layer;
- a second ILD layer in contact with a second side opposite to the first side of the semiconductor layer;
- and
- a plurality of second contacts each extending vertically through the second ILD layer and the semiconductor layer and in contact with the plurality of first contacts, respectively.
A three-dimensional (3D) semiconductor device, comprising:
- a stack of a first interlayer dielectric (ILD) layer, a semiconductor layer, and a second ILD layer;
- and
- a capacitor structure comprising:
- a first capacitor comprising a pair of first contacts each extending vertically through the first ILD layer;
- and
- at least one of a second capacitor comprising a pair of portions of the semiconductor layer separated by a dielectric cut extending vertically through the semiconductor layer, or a third capacitor comprising a pair of second contacts each extending vertically through the second ILD layer.
Dependencies are inferred from the claim text.