Method for manufacturing memory and same
AssigneeChangxin Memory Technologies, Inc.
InventorsEr-Xuan Ping, Zhen Zhou, Lingguo Zhang
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a memory includes the following steps. A substrate and bit line contact layers are provided. Pseudo bit line structures are formed at tops of the bit line contact layers. Sacrificial layers filling regions between adjacent bit line structures are formed, and the sacrificial layers are located on side walls of the pseudo bit line structures and side walls of the bit line contact layers. After forming the sacrificial layers, the pseudo bit line structures are removed to form through holes exposing the bit line contact layers. Bit line conductive parts filling the through holes and covering the bit line contact layers are formed.
Claims20
A method for manufacturing a memory, comprising:
- providing a substrate and a plurality of discrete bit line contact layers, a plurality of active areas being provided in the substrate, and the bit line contact layers being one-to-one electrically connected to the active areas;
- forming pseudo bit line structures at tops of the bit line contact layers;
- forming sacrificial layers filling regions between adjacent pseudo bit line structures, the sacrificial layers being located on side walls of the pseudo bit line structures and side walls of the bit line contact layers;
- after forming the sacrificial layers, removing the pseudo bit line structures to form through holes exposing the bit line contact layers;
- and
- forming bit line conductive parts filling the through holes and covering the bit line contact layers.
Dependencies are inferred from the claim text.