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US 2022/0068936 A1Published application
Semiconductor structure and manufacturing method of semiconductor structure
AssigneeChangxin Memory Technologies, Inc.
InventorChun-Sheng JUAN LU
Life of this patent
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Abstract
A semiconductor structure includes a substrate, word lines, bit line contact plugs, and first isolation layers. The word lines are located in the substrate. A bit line contact hole is provided between two adjacent word lines. The bit line contact plugs are located in the bit line contact holes. The first isolation layers are located on side walls of the bit line contact holes and cover side walls of the bit line contact plugs.
Claims16
A semiconductor structure, comprising:
- a substrate;
- word lines, located in the substrate, wherein a bit line contact hole is provided between each two adjacent word lines;
- bit line contact plugs, located in the bit line contact holes;
- and
- first isolation layers, located on side walls of the bit line contact holes and covering side walls of the bit line contact plugs.
2 more elements
A manufacturing method of a semiconductor structure, comprising:
- providing a substrate;
- forming word lines in the substrate, and forming a bit line contact hole between each two adjacent word lines;
- forming a first isolation layer on a side wall of the bit line contact hole;
- and
- forming a bit line contact plug in the first isolation layer, the first isolation layer covering a side wall of the bit line contact plug.
2 more elements
Dependencies are inferred from the claim text.