Method Used In Forming An Array Of Vertical Transistors And Method Used In Forming An Array Of Memory Cells Individually Comprising A Vertical Transistor And A Storage Device Above The Vertical Transistor

A method used in forming an array of vertical transistors, comprising:

• forming pillars individually comprising an upper source/drain region, a channel region vertically below the upper source/drain region, and sacrificial material above the upper source/drain region;
• intervening material being about the sacrificial material of individual of the pillars, the intervening material and the sacrificial material comprising different compositions relative one another;
• forming horizontally-elongated and spaced conductive gate lines individually operatively aside the channel region of the individual pillars;
• removing the sacrificial material to expose the upper source/drain region of the individual pillars and thereby form an opening in the intervening material directly above the upper source/drain region of the individual pillars;
• laterally-widening individual of the openings above the upper source/drain region in one vertical cross-section after their initial formation;
• forming metal material in the individual widened openings directly against the upper source/drain region of the individual pillars and atop the intervening material laterally outside of the widened openings, the metal material that is atop the intervening material interconnecting the metal material that is in the individual widened openings;
• removing the metal material back to have an uppermost surface that is no higher than an uppermost surface of the intervening material and to disconnect it from interconnecting the metal material that is in the individual openings and thereby form a laterally-isolated individual metal-material plug in the individual openings, the metal material and the upper source/drain region being of different compositions relative one another, the removing the metal material back removing all of the metal material from being atop the intervening material, the uppermost surface of the metal material and the uppermost surface of the intervening material after the removing the metal material back being coplanar;
• after forming the laterally-isolated individual metal-material plugs, vertically etching the intervening material selectively relative to said metal-material plugs.

A method used in forming an array of memory cells individually comprising a vertical transistor and a storage device above the vertical transistor, comprising:

• forming horizontally-elongated and spaced digitlines that individually interconnect a respective multiple of the vertical transistors in a column direction;
• forming pillars that are atop and directly electrically coupled to individual of the digitlines;
• the pillars individually comprising an upper source/drain region, a channel region vertically below the upper source/drain region, and sacrificial material above the upper source/drain region;
• intervening material about the sacrificial material of individual of the pillars, the intervening material and the sacrificial material comprising different compositions relative one another;
• forming horizontally-elongated and spaced conductive gate lines individually operatively aside the channel region of the individual pillars and that individually interconnect a respective plurality of the vertical transistors in a row direction;
• removing the sacrificial material to expose the upper source/drain region of the individual pillars and thereby form an opening in the intervening material directly above the upper source/drain region of the individual pillars;
• forming metal material in individual of the openings directly against the upper source/drain region of the individual pillars and atop the intervening material laterally outside of the openings, the metal material that is atop the intervening material interconnecting the metal material that is in the individual openings;
• removing the metal material back to have an uppermost surface that is no higher than an uppermost surface of the intervening material and to disconnect it from interconnecting the metal material that is in the individual openings and thereby form a laterally-isolated individual metal-material plug in the individual openings;
• and
• after removing the metal material, forming storage devices that are individually above and electrically coupled to one of the individual metal-material plugs.