Semiconductor device and manufacturing method thereof

A manufacturing method of a semiconductor device, comprising:

• providing a substrate, wherein the substrate comprises a memory array region and a peripheral circuit region;
• forming a capacitor on the substrate in the memory array region, wherein the capacitor comprises:
• a first electrode located on the substrate;
• a second electrode located on the first electrode;
• and
• an insulating layer located between the first electrode and the second electrode;
• simultaneously forming a stop layer in the memory array region and the peripheral circuit region, wherein the stop layer is located on the second electrode, and a material of the stop layer is not a conductive material;
• after forming the stop layer, forming a planarization layer on the stop layer;
• and
• forming a first contact in the memory array region, and forming a second contact in the peripheral circuit region, wherein the first contact and the second contact pass through the planarization layer and the stop layer, and the first contact is electrically connected to the second electrode.