Techniques and device structure based upon directional seeding and selective deposition

A method of forming multi-level device contact, comprising:

• providing a substrate, the substrate defining a plane of the substrate and having an array of spacer features, disposed over an array of active device features, arranged in a first level;
• and
• directing a reactive beam to the array of spacer features, the reactive beam defining a non-zero angle of incidence with respect to a perpendicular to the plane of the substrate, wherein a seed layer is deposited on a first portion of the array of spacer features, and is not deposited on a second portion of the array of spacer features,
• wherein the reactive beam comprises a metallic species, and wherein the seed layer forms an array of staggered contacts, having an S-shape.

An electronic device, comprising:

• an active device region, disposed at least partially in a first level, the active device region comprising an array of active device features;
• an array of device structures, disposed in a second level, above the first level;
• and
• a contact level, comprising an array of staggered contacts, wherein the array of staggered contacts electrically connect the array of active device features to the array of device structures.