Method of Manufacturing Bipolar Complementary-Metal-Oxide-Semiconductor (BiCMOS) Devices Using Nickel Silicide

31:

• The method of claim 30 wherein said performing said first rapid thermal anneal forms CMOS nickel silicided regions, a nickel silicided extrinsic base, and a nickel silicided collector sinker.

32:

• The method of claim 30 further comprising performing a second rapid thermal anneal.

33:

• The method of claim 31, wherein said nickel silicided extrinsic base is conformal, and wherein a conformal segment of said nickel silicided extrinsic base is situated at a minimum process dimension from said dielectric spacer, so as to reduce a base resistance of said bipolar transistor.

34:

• The method of claim 31, wherein said nickel silicided extrinsic base is raised.

36:

• The method of claim 35 further comprising performing a first rapid thermal anneal to form nickel silicided regions.

37:

• The method of claim 36 further comprising removing unreacted nickel to form a nickel silicided emitter comprising nickel silicide on a top surface thereof.

38:

• The method of claim 36, wherein said performing said first rapid thermal anneal further forms a nickel silicided extrinsic base, and a nickel silicided collector sinker.

39:

• The method of claim 36 further comprising performing a second rapid thermal anneal.

40:

• The method of claim 38, wherein said nickel silicided extrinsic base is conformal, and wherein a conformal segment of said nickel silicided extrinsic base is situated at a minimum process dimension from said dielectric spacer, so as to reduce a base resistance of said bipolar transistor.

41:

• The method of claim 38, wherein said nickel silicided extrinsic base is raised.

43:

• The method of claim 42 further comprising performing a first rapid thermal anneal to form nickel silicided regions.

44:

• The method of claim 43 further comprising removing unreacted nickel to form a nickel silicided emitter comprising nickel silicide on a top surface thereof.

45:

• The method of claim 43, wherein said performing said first rapid thermal anneal further forms a nickel silicided extrinsic base, and a nickel silicided collector sinker.

46:

• The method of claim 43 further comprising performing a second rapid thermal anneal.

47:

• The method of claim 45, wherein said nickel silicided extrinsic base is conformal, and wherein a conformal segment of said nickel silicided extrinsic base is situated at a minimum process dimension from said dielectric spacer, so as to reduce a base resistance of said bipolar transistor.

48:

• The method of claim 45, wherein said nickel silicided extrinsic base is raised.