Nickel Silicide in Bipolar Complementary-Metal-Oxide-Semiconductor (BiCMOS) Device and Method of Manufacturing

A bipolar complementary-metal-oxide-semiconductor (BiCMOS) device comprising:

• a MOS transistor in a CMOS region, said MOS transistor including CMOS nickel silicided regions;
• a bipolar transistor in a bipolar region, said bipolar transistor comprising:
• a nickel silicided emitter, a collector, and a base comprising an intrinsic base, a link base, and a nickel silicided extrinsic base;
• said intrinsic base being situated between said nickel silicided emitter and said collector;
• a dielectric spacer separating said link base from said nickel silicided emitter;
• said nickel silicided extrinsic base providing an electrical connection to said link base and said intrinsic base;
• a nickel silicided collector sinker providing an electrical connection to said collector;
• wherein said nickel silicided extrinsic base has a substantially planar top surface, has a first thickness over a first segment of said bipolar region, and has a second thickness different from said first thickness over a second segment of said bipolar region;
• and
• said CMOS nickel silicided regions, nickel silicided emitter, nickel silicided extrinsic base, and nickel silicided collector sinker including at least one additive selected from the group consisting of molybdenum (Mo) and platinum (Pt).

A bipolar complementary-metal-oxide-semiconductor (BiCMOS) device comprising:

• a MOS transistor in a CMOS region, said MOS transistor including CMOS nickel silicided regions;
• a bipolar transistor in a bipolar region, said bipolar transistor comprising:
• a nickel silicided emitter, a collector, and a base comprising an intrinsic base, a link base, and an extrinsic base;
• said intrinsic base being situated between said nickel silicided emitter and said collector;
• a dielectric spacer separating said link base from said nickel silicided emitter;
• said extrinsic base providing an electrical connection to said link base and said intrinsic base;
• said intrinsic base causing an increase in a gain of said bipolar transistor;
• wherein said extrinsic base has a substantially planar top surface, has a first thickness over a first segment of said bipolar region, and has a second thickness different from said first thickness over a second segment of said bipolar region;
• and
• a nickel silicided collector sinker providing an electrical connection to said collector.

A bipolar complementary-metal-oxide-semiconductor (BiCMOS) device comprising:

• a MOS transistor in a CMOS region, said MOS transistor including CMOS nickel silicided regions;
• a bipolar transistor in a bipolar region, said bipolar transistor comprising:
• a nickel silicided emitter, a collector, and a base comprising an intrinsic base, a link base, and an extrinsic base;
• said intrinsic base being situated between said nickel silicided emitter and said collector;
• a dielectric spacer separating said link base from said nickel silicided emitter;
• said extrinsic base providing an electrical connection to said link base and said intrinsic base;
• wherein said extrinsic base has a substantially planar top surface, has a first thickness over a first segment of said bipolar region, and has a second thickness different from said first thickness over a second segment of said bipolar region;
• and
• a collector sinker providing an electrical connection to said collector.

A bipolar complementary-metal-oxide-semiconductor (BiCMOS) device comprising:

• a MOS transistor in a CMOS region, said MOS transistor including CMOS nickel silicided regions;
• a bipolar transistor in a bipolar region, said bipolar transistor comprising:
• a nickel silicided emitter, a collector, and a base comprising an intrinsic base, a link base, and a nickel silicided extrinsic base;
• said intrinsic base being situated between said nickel silicided emitter and said collector;
• a dielectric spacer separating said link base from said nickel silicided emitter;
• said nickel silicided extrinsic base providing an electrical connection to said link base and said intrinsic base;
• wherein said nickel silicided extrinsic base has a substantially planar top surface, has a first thickness over a first segment of said bipolar region, and has a second thickness different from said first thickness over a second segment of said bipolar region;
• and
• a collector sinker providing an electrical connection to said collector.