Iii-n transistors with integrated linearization devices

Abstract

Disclosed herein are IC structures, packages, and devices that include linearization devices integrated on the same support structure as III-N transistors. A linearization device may be any suitable device that may exhibit behavior complementary to that of a III-N transistor so that a combined behavior of the III-N transistor and the linearization device includes less nonlinearity than the behavior of the III-N transistor alone. Linearization devices may be implemented as, e.g., one-sided diodes, two-sided diodes, or P-type transistors. Integrating linearization devices on the same support structure with III-N transistors advantageously provides an integrated solution based on III-N transistor technology, thus providing a viable approach to reducing or eliminating nonlinear behavior of III-N transistors. In some implementations, linearization devices may be integrated with III-N transistors by being disposed side-by-side with the III-N transistors, advantageously enabling implementation of both the III-N transistors and the linearization devices in a single device layer.

Dependencies are inferred from the claim text.