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US 2022/0068880 A1Published application
Semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCHEN-HUA YU, CHI-HSI WU, DER-CHYANG YEH, HSIEN-WEI CHEN, AN-JHIH SU, TIEN-CHUNG YANG
Life of this patent
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Abstract
The semiconductor structure includes a plurality of first dies, a plurality of second dies disposed over each of the first dies, and a dielectric material surrounding the plurality of first dies and the plurality of second die. Each of the second dies overlaps a portion of each first die.
Claims20
A semiconductor structure, comprising:
- a plurality of first dies;
- a plurality of second dies disposed over each of the first dies;
- and
- a dielectric material surrounding the plurality of first dies and the plurality of second dies,
- wherein each of the second dies overlaps a portion of each first die.
2 more elements
A semiconductor structure, comprising:
- a plurality of first dies;
- a plurality of second dies disposed over each of the first dies;
- and
- a dielectric material surrounding the plurality of first dies and the plurality of second dies,
- wherein each of the second dies overlaps a portion one of the first dies.
2 more elements
A semiconductor structure, comprising:
- a first die and a second die in a first level;
- a third die and a fourth die in a second level over the first level;
- and
- a dielectric material surrounding the first die, the second die, the third die and the fourth die.
- wherein the third die overlaps a portion of the second die, and the fourth die overlaps a portion of the first die.
2 more elements
Dependencies are inferred from the claim text.