Semiconductor device

A semiconductor device comprising:

• a semiconductor substrate that includes a plurality of integrated devices on a front surface of the semiconductor substrate;
• a redistribution layer on the semiconductor substrate;
• a plurality of pads and a plurality of under-bump pads on a central region of the redistribution layer;
• and
• a first grouping pattern on a peripheral region of the redistribution layer, the peripheral region being spaced apart from and surrounding the central region,
• wherein the plurality of pads include:
• a plurality of first pads connected to a signal circuit of the plurality of integrated devices;
• and
• a plurality of second pads connected to the first grouping pattern and a ground circuit of the plurality of integrated devices.

A semiconductor device comprising:

• a semiconductor die;
• a dielectric pattern on an active surface of the semiconductor die;
• a first conductive pattern in the dielectric pattern;
• a second conductive pattern on a top surface of the dielectric pattern;
• and
• a plurality of solder bumps on the second conductive pattern,
• wherein the second conductive pattern includes:
• a grouping pattern having a ring shape that extends along an outer edge of the dielectric pattern;
• a plurality of under-bump pads on the top surface of the dielectric pattern;
• and
• a plurality of die pads connected to the plurality of under-bump pads and the grouping pattern,
• wherein a distance from the outer edge of the dielectric pattern to the grouping pattern is less than a distance from the enter edge of the dielectric pattern to the plurality of under-bump pads and the distance from the outer edge of the dielectric pattern to the grouping pattern is less than a distance from the outer edge of the dielectric pattern to the plurality of die pads, and
• wherein a plurality of ground circuits in the semiconductor die are connected to the grouping pattern and have the same electrical potential.