Method of fabricating a semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsJu-Il CHOI, Pil-Kyu KANG, Hoechul KIM, Hoonjoo NA, Jaehyung PARK, Seongmin SON
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Abstract
A semiconductor device and a semiconductor package, the device including a first buffer dielectric layer on a first dielectric layer; a second dielectric layer and a second buffer dielectric layer sequentially disposed on the first buffer dielectric layer, the second buffer dielectric layer being in contact with the first buffer dielectric layer; and a pad interconnection structure that penetrates the first buffer dielectric layer and the second buffer dielectric layer, wherein the pad interconnection structure includes copper and tin.
Claims16
A method of fabricating a semiconductor device, the method comprising:
- preparing a first pad structure including a first pad and a first bonding metal pad on the first pad;
- preparing a second pad structure including a second pad and a second bonding metal pad on the second pad;
- stacking the second pad structure on the first pad structure so that the first bonding metal pad and the second bonding metal pad face each other;
- and
- forming a pad interconnection structure connecting the first pad and the second pad from the first bonding metal pad and the second bonding metal pad,
- wherein:
- the pad interconnection structure includes:
- a central part,
- a first intermediate part surrounding the central part,
- a second intermediate part surrounding the first intermediate part, and
- an outer part surrounding the second intermediate part,
- a grain size of the outer part is less than a grain size of the second intermediate part,
- the grain size of the second intermediate part is less than a grain size of the first intermediate part, and
- the grain size of the first intermediate part is less than a grain size of the central part.
A method of fabricating a semiconductor device, the method comprising:
- preparing a first pad structure including a first pad, a first buffer dielectric layer on the first pad, and a first bonding metal pad passing through the first buffer dielectric layer and connected to the first pad;
- preparing a second pad structure including a second pad, a second buffer dielectric layer on the second pad, and a second bonding metal pad passing through the second buffer dielectric layer and connected to the second pad;
- contacting the first bonding metal pad and the second bonding metal pad to form a gap between the first buffer dielectric layer and the second buffer dielectric layer;
- and
- forming a pad interconnection structure from the first bonding metal pad and the second bonding metal pad,
- wherein:
- the pad interconnection structure includes copper and tin, and
- forming the pad interconnection structure includes performing an annealing process to remove the gap.
Dependencies are inferred from the claim text.