Semiconductor device with graphene layers and method for fabricating the same
AssigneeNanya Technology Corporation
InventorTse-Yao HUANG
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Abstract
The present application discloses a semiconductor device with graphene layers and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a first passivation layer positioned above the substrate, a redistribution layer positioned on the first passivation layer, a first adjustment layer positioned on the redistribution layer, a pad layer positioned on the first adjustment layer, and a second adjustment layer positioned between the pad layer and the first adjustment layer. The first adjustment layer and the second adjustment layer are formed of graphene.
Claims20
A semiconductor device, comprising:
- a substrate;
- a first passivation layer positioned above the substrate;
- a redistribution layer positioned on the first passivation layer;
- a first adjustment layer positioned on the redistribution layer;
- a pad layer positioned on the first adjustment layer;
- and
- a second adjustment layer positioned between the pad layer and the first adjustment layer;
- wherein the first adjustment layer and the second adjustment layer are formed of graphene.
A method for fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a redistribution layer above the substrate;
- forming a first adjustment layer on the redistribution layer;
- forming a second adjustment layer on the first adjustment layer;
- and
- forming a pad layer on the second adjustment layer;
- wherein the first adjustment layer and the second adjustment layer are formed of graphene.
Dependencies are inferred from the claim text.