Front end of line interconnect structures and associated systems and methods

A semiconductor device, comprising:

• a substrate material comprising silicon, the substrate material having a front side, a backside, and a trench at the front side;
• active electrical components at the front side of the substrate material on either side of the trench;
• a conformal dielectric material over at least a portion of the front side of the substrate material and in the trench;
• a fill dielectric material on the conformal dielectric material in the trench;
• and
• a conductive material extending across at least a portion of the conformal dielectric material and the fill dielectric material, the conductive material having a backside surface defining an active contact surface.

A method for forming an electrical connection on the backside of a semiconductor device, the method comprising:

• forming, during front-end-of-line processing of the semiconductor device—
• a trench at the front side of a substrate material;
• active electrical components at the front side of the substrate material on either side of the trench;
• a conformal dielectric material over at least a portion of the front side of the substrate material and in the trench;
• a fill dielectric material on the conformal dielectric material in the trench;
• and
• a conductive material extending across at least a portion of the conformal dielectric material and the fill dielectric material.