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AssigneeMicron Technology, Inc.
InventorsKyle K. Kirby, Kunal R. Parekh
Estimating the term…
Systems and methods for a semiconductor device having a front-end-of-line interconnect structure are provided. The semiconductor device may include a dielectric material having a backside formed on a front side of a semiconductor or silicon substrate material and a front side, and a conducting material on the front side of the dielectric material. The conducting material may have a line portion and an interconnect structure electrically coupled to the line portion and separated from the front side of the substrate material by the dielectric material. The interconnect structure has a backside defining a contact surface. The semiconductor device may further include a semiconductor die proximate the front side of the dielectric material, an insulating material encasing at least a portion of the semiconductor die, and an opening through which the active contact surface at the backside of the interconnect structure is exposed for electrical connection.
A semiconductor device, comprising:
A method for forming an electrical connection on the backside of a semiconductor device, the method comprising:
Dependencies are inferred from the claim text.