Semiconductor package and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsInhyung SONG, Kyoung Lim SUK, Jaegwon JANG, Wonkyoung CHOI
Life of this patent
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Abstract
A semiconductor package includes a first semiconductor device on a first redistribution substrate, a first mold layer that covers the first semiconductor device and the first redistribution substrate, and a second redistribution substrate on the first mold layer, the second redistribution substrate including a first opening that exposes a top surface of the first mold layer, a sidewall of the second redistribution substrate that is exposed to the first opening having a stepwise structure.
Claims21
A semiconductor package, comprising:
- a first semiconductor device on a first redistribution substrate;
- a first mold layer that covers the first semiconductor device and the first redistribution substrate;
- and
- a second redistribution substrate on the first mold layer, the second redistribution substrate including a first opening that exposes a top surface of the first mold layer, a sidewall of the second redistribution substrate that is exposed to the first opening having a stepwise structure.
A semiconductor package, comprising:
- a first semiconductor device on a first redistribution substrate;
- a first mold layer that covers the first semiconductor device and the first redistribution substrate;
- a second redistribution substrate on the first mold layer, the second redistribution substrate including a first opening that exposes a top surface of the first mold layer, and the second redistribution substrate having a thickness of about 20 μm to about 30 μm;
- and
- a conductive pillar that penetrates the first mold layer and electrically connects the first redistribution substrate to the second redistribution substrate,
- wherein the second redistribution substrate includes:
- a first redistribution dielectric layer that contacts the first mold layer and has a first sidewall,
- a second redistribution dielectric layer on the first redistribution dielectric layer, the second redistribution dielectric layer having a second sidewall spaced apart from the first sidewall, and the second redistribution dielectric layer partially exposing a top surface of the first redistribution dielectric layer, and
- a first redistribution pattern between the first redistribution dielectric layer and the second redistribution dielectric layer, the first redistribution pattern penetrating the first redistribution dielectric layer and contacting the conductive pillar.
A semiconductor package, comprising:
- a first semiconductor device on a first redistribution substrate;
- a first mold layer that covers the first semiconductor device and the first redistribution substrate;
- and
- a second redistribution substrate on the first mold layer, the second redistribution substrate having a first opening that exposes a top surface of the first mold layer,
- wherein the second redistribution substrate includes a first redistribution dielectric layer and a second redistribution dielectric layer that are sequentially stacked, and
- wherein a thickness of the first redistribution dielectric layer is less than a thickness of the second redistribution dielectric layer.
-25. (canceled)
Dependencies are inferred from the claim text.