On-chip capacitors in semiconductor devices and methods for forming the same
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsLei Xue, Wei Liu, Liang Chen
Life of this patent
Estimating the term…
Abstract
Embodiments of semiconductor devices and methods for forming the same are disclosed. In an example, a semiconductor device includes at least one dielectric layer pair including a first dielectric layer and a second dielectric layer different from the first dielectric layer, an interlayer dielectric (ILD) layer in contact with the at least one dielectric layer pair, and one or more capacitors each extending vertically through the ILD layer and in contact with the at least one dielectric layer pair.
Claims20
A semiconductor device, comprising:
- at least one dielectric layer pair comprising a first dielectric layer and a second dielectric layer different from the first dielectric layer;
- an interlayer dielectric (ILD) layer in contact with the at least one dielectric layer pair;
- and
- one or more capacitors each extending vertically through the ILD layer and in contact with the at least one dielectric layer pair.
A three-dimensional (3D) memory device, comprising:
- a semiconductor layer;
- a memory stack on one side of the semiconductor layer, the memory stack comprising a plurality of conductive/dielectric layer pairs each comprising a conductive layer and a first dielectric layer;
- and
- a plurality of first contacts disposed in a peripheral region of the 3D memory device outside of the memory stack.
A method for forming a three-dimensional (3D) memory device, comprising:
- forming a dielectric stack above a substrate, the dielectric stack comprising a plurality of dielectric layer pairs each comprising a first dielectric layer and a second dielectric layer different from the first dielectric layer;
- etching the dielectric stack to form a staircase structure in a device region, leaving at least one dielectric layer pair in a peripheral region;
- forming an interlayer dielectric (ILD) layer on the at least one dielectric layer pair in the peripheral region;
- and
- forming a plurality of first contacts each extending vertically through the ILD layer and above and in contact with the at least one dielectric layer pair.
Dependencies are inferred from the claim text.