Front end of line interconnect structures and associated systems and methods

A semiconductor device, comprising:

• a dielectric material having a backside formed on a front side of a semiconductor substrate material and a front side opposite the backside;
• a semiconductor memory array proximate the front side of the dielectric material;
• an insulating material encasing at least a portion of the semiconductor memory array;
• an opening through the dielectric material to the semiconductor memory array;
• and
• an interconnect structure extending through the opening of the dielectric material, the interconnect structure having a backside defining an active contact surface and a front side opposite the backside electrically connected to the semiconductor memory array, wherein the active contact surface at the backside of the interconnect structure is exposed for electrical connection.

A method for forming an electrical connection on the backside of a semiconductor device, the method comprising:

• forming, during front-end-of-line processing of the semiconductor device—
• a dielectric material on a semiconductor substrate material, the dielectric material having a backside on a front side of the substrate material and a front side opposite the backside;
• an interconnect structure through the dielectric material to the substrate material, the interconnect structure having a backside electrically connected to a semiconductor memory array proximate the front side of the dielectric material and having a front side opposite the backside;
• and
• an active contact surface on the backside of the interconnect structure;
• and
• exposing the active contact surface for electrical connection access by removing the substrate material adjacent to the active contact surface.