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US 2022/0068709 A1Published application
Low Resistivity Tungsten Film And Method Of Manufacture
AssigneeApplied Materials, Inc.
InventorsFeihu Wang, Joung Joo Lee, Xi Cen, Zhibo Yuan, Wei Lei, Kai Wu, Chunming Zhou, Zhebo Chen
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Abstract
Apparatus and methods to provide electronic devices comprising tungsten film stacks are provided. A tungsten liner formed by physical vapor deposition is filled with a tungsten film formed by chemical vapor deposition directly over the tungsten liner.
Claims20
A method of forming a tungsten stack on a substrate, the method comprising:
- forming a tungsten liner layer on a surface of the substrate using a physical vapor deposition process;
- and
- forming a tungsten film directly on the tungsten liner layer using a chemical vapor deposition process.
A method of forming a tungsten stack on a substrate, the method comprising:
- placing the substrate on a substrate support in physical vapor deposition process chamber;
- forming a tungsten liner layer having a grain size on a surface of the substrate using a physical vapor deposition process;
- controlling the grain size of the tungsten liner layer to greater than 100 Ångstroms;
- and
- forming a tungsten film directly on the tungsten liner layer using a chemical vapor deposition process.
2 more elements
An electronic device comprising:
- a physical vapor deposition-deposited tungsten liner layer on a surface;
- and
- a chemical vapor-deposition-deposited tungsten film directly on the tungsten liner layer.
Dependencies are inferred from the claim text.