Method of forming interconnect structure
AssigneeSamsung Electronics Co., Ltd.
InventorsKeunwook SHIN, Sanghoon AHN, Woojin LEE, Kyung-Eun BYUN, Junghoo SHIN, Hyeonjin SHIN, Yunseong LEE
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Abstract
Provided is a method of forming an interconnect structure. The method includes preparing a substrate including a first metal layer and a first insulating layer, selectively forming a carbon layer having an sp2 bonding structure on the first metal layer, selectively forming a second insulating layer on the first insulating layer, forming a third insulating layer to cover the second insulating layer, and forming a second metal layer electrically connected to the first metal layer.
Claims25
A method of forming an interconnect structure, the method comprising:
- preparing a substrate including a first metal layer and a first insulating layer;
- selectively forming a carbon layer on the first metal layer, the carbon layer having an sp2 bonding structure;
- selectively forming a second insulating layer on the first insulating layer;
- forming a third insulating layer to cover the second insulating layer;
- and
- forming a second metal layer electrically connected to the first metal layer.
A method of forming an interconnect structure, the method comprising:
- selectively forming a carbon layer on a substrate, the substrate including a first metal layer and a first insulating layer, the carbon layer having an sp2 bonding structure, the carbon layer covering an upper surface of the first metal layer and not covering an upper surface of the first insulating layer;
- selectively forming a second insulating layer on the upper surface of the first insulating layer and not the upper surface of the first metal layer;
- forming a third insulating layer on the substrate, the third insulating layer covering the second insulating layer;
- and
- forming a second metal layer on the third insulating layer, a portion of the second metal layer extending through an opening in the third insulating layer and being electrically connected to the first metal layer.
Dependencies are inferred from the claim text.