Methods for forming memory devices, and associated devices and systems

A method of manufacturing a memory device including a plurality of memory cells operably coupled to corresponding ones of a plurality of selectors, the method comprising:

• forming a cap layer over the memory cells;
• removing a portion of the memory cells and the cap layer to form a socket;
• forming a conductive via in the socket;
• and
• forming a metallization layer over the cap layer and the socket such that the metallization layer directly contacts the conductive via.

A method of manufacturing a memory device including a plurality of memory cells operably coupled to corresponding ones of a plurality of selectors, the method comprising:

• forming a cap layer over the memory cells;
• depositing an insulative material over the cap layer;
• removing a portion of the memory cells to form a socket after forming the cap layer;
• forming a conductive via in the socket;
• and
• etching the insulative material to remove the insulative material.