Wafer processing apparatus and wafer processing method using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsCHANYEONG JEONG, HOSEOP CHOI, SUNGGIL KANG, DONGKYU SHIN, SANGJIN AN
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Abstract
A wafer processing method includes supplying a first process gas into a wafer processing apparatus, lowering a temperature of the wafer, generating plasma using the first process gas, supplying a second process gas and mixing the second process gas with the plasma, performing a plasma process on the wafer using the plasma and the second process gas, and performing an annealing process on the wafer on which the plasma process has been performed. The lowering of the temperature of the wafer includes increasing an internal pressure of the wafer processing apparatus.
Claims21
A method of manufacturing a semiconductor device, the method comprising:
- loading a wafer into a wafer processing apparatus;
- and
- processing the wafer in the wafer processing apparatus,
- wherein the processing the wafer comprises
- supplying a first process gas into the wafer processing apparatus,
- generating plasma using the first process gas,
- supplying a second process gas and mixing the second process gas with the plasma,
- performing, at an first internal pressure of the wafer processing apparatus, a plasma process on the wafer using the plasma and the second process gas at a first temperature, and
- performing, at a second internal pressure of the wafer processing apparatus less than the first internal pressure, an annealing process on the wafer at a second temperature higher than the first temperature after the performing the plasma process wherein a temperature of the wafer is adjusted by changing an internal pressure of the wafer processing apparatus.
A wafer processing method comprising:
- supplying a first process gas including fluorine (F) to a wafer processing apparatus;
- applying radio frequency (RF) power to the first process gas to generate plasma;
- performing, at an first internal pressure of the wafer processing apparatus, a plasma process on a wafer in the wafer processing apparatus using the plasma at a first temperature;
- and
- performing, at a second internal pressure of the wafer processing apparatus less than the first internal pressure, an annealing process on the wafer at a second temperature higher than the first temperature after the performing the plasma process,
- wherein the performing the plasma process on the wafer and the performing the annealing process on the wafer are alternately and repeatedly performed in the wafer processing apparatus in-situ, and
- a temperature of the wafer is adjusted by changing an internal pressure of the wafer processing apparatus.
A wafer processing method comprising:
- generating plasma in a wafer processing apparatus using NF3;
- performing, at an first internal pressure of the wafer processing apparatus, a plasma process on a wafer in the wafer processing apparatus using the generated plasma at a first temperature;
- and
- performing, at a second internal pressure of the wafer processing apparatus less than the first internal pressure, an annealing process on the wafer at a second temperature higher than the first temperature,
- wherein the performing the plasma process on the wafer and the performing the annealing process on the wafer are alternately and repeatedly performed in the wafer processing apparatus, and
- a temperature of the wafer is adjusted by changing an internal pressure of the wafer processing apparatus.
21-38. (canceled)
Dependencies are inferred from the claim text.