Method for etching a iii-n material layer
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsNicolas POSSEME, Simon RUEL
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Abstract
A method for etching at least one portion of a III-N material layer, including the implementation of the following steps of: a) first etching of a first part of the thickness of the portion of the III-N material layer, implemented by using a first plasma including chlorine; b) exposing at least one part of a remaining thickness of the portion of the III-N material layer to a second plasma including helium or hydrogen; c) chlorinating the part of the remaining thickness of the portion of the III-N material layer, transforming the part of the remaining thickness of the portion of the III-N material layer into a chlorinated material layer; d) second etching of the chlorinated material layer, implemented by using a third plasma including argon.
Claims11
A method for etching at least one portion of a III-N material layer, including implementing the following steps of:
- a) first etching of a first part of the thickness of the portion of the III-N material layer, implemented by using a first plasma including chlorine;
- b) exposing at least one part of a remaining thickness of the portion of the III-N material layer to a second plasma including helium or hydrogen;
- c) chlorinating the part of the remaining thickness of the portion of the III-N material layer, transforming the part of the remaining thickness of the portion of the III-N material layer into a chlorinated material layer;
- d) second etching of the chlorinated material layer, implemented by using a third plasma including argon.
Dependencies are inferred from the claim text.