Techniques and apparatus for anisotropic stress compensation in substrates using ion implantation
AssigneeApplied Materials, Inc.
InventorsScott Falk, Jun-Feng LU, Qintao Zhang
Life of this patent
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Abstract
A method may include providing a substrate, where the substrate includes a first main surface and a second main surface, opposite the first main surface. The second main surface may include a stress compensation layer. The method may include directing ions to the stress compensation layer in an ion implant procedure. The ion implant procedure may include exposing a first region of the stress compensation layer to a first implant process, wherein a second region of the stress compensation layer is not exposed to the first implant process.
Claims15
An apparatus for substrate stress control, comprising:
- a beam scanner to scan an ion beam with respect to a substrate, the substrate including a stress control layer;
- a user interface, coupled to the beam scanner;
- a controller, coupled to the beam scanner and the user interface, the controller comprising:
- a processor;
- and
- a memory unit coupled to the processor, including a scan routine, the scan routine operative on the processor to receive substrate stress information from the user interface and generate an implant pattern to control the beam scanner, the implant pattern to generate an anisotropic stress within the stress control layer.
An apparatus for substrate stress control, comprising:
- a beam scanner to scan an ion beam with respect to a substrate along a beam scan direction, the substrate including a stress control layer;
- a controller, coupled to the beam scanner, the controller comprising:
- a processor;
- and
- a memory unit coupled to the processor, including a scan routine, the scan routine operative on the processor to:
- receive substrate stress information from the user interface;
- generate an implant pattern to control the beam scanner, the implant pattern to generate an anisotropic stress within the stress control layer;
- and
- implement the first implant pattern in a substrate by:
- exposing a first region of the stress control layer to a first implant process;
- and
- scanning the substrate along a substrate scan direction, perpendicular to the beam scan direction, wherein a second region of the stress control layer is not exposed to the first implant process.
Dependencies are inferred from the claim text.