Method and device for controlling a thickness of a protective film on a substrate
AssigneeTokyo Electron Limited
InventorTakayuki KATSUNUMA
Life of this patent
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Abstract
A method of forming a film on a substrate that includes an etching layer and a mask formed on the etching layer. The method comprises (a) exposing the substrate, in a reaction chamber, to a precursor to dispose precursor particles on at least a sidewall of a recess in the etching layer; (b) supplying an inhibitor gas and a modification gas to the reaction chamber to generate a plasma; and (c) modifying the precursor particles on the sidewall into a protective film while the inhibitor gas and the modification gas are supplied in the reaction chamber.
Claims20
A method of forming a film on a substrate, the substrate including an etching layer and a mask formed on the etching layer, the method comprising:
- (a) exposing the substrate, in a reaction chamber, to a precursor to dispose precursor particles on at least a sidewall of a recess in the etching layer;
- (b) supplying an inhibitor gas and a modification gas to the reaction chamber to generate a plasma;
- and
- (c) modifying the precursor particles on the sidewall into a protective film while the inhibitor gas and the modification gas are supplied in the reaction chamber.
A method of forming a film on a substrate, the substrate including an etching layer and a mask formed on the etching layer, the method comprising:
- during a first time period:
- (a) exposing the substrate, in a reaction chamber, to a precursor to dispose precursor particles on at least a sidewall of a recess in the etching layer;
- and
- during a second time period:
- (b) supplying an inhibitor gas and a modification gas to the reaction chamber to generate a plasma;
- and
- (c) modifying the precursor particles on the sidewall into a protective film while the inhibitor gas and the modification gas are supplied in the reaction chamber.
A device for forming a film on a substrate, the substrate including an etching layer and a mask formed on the etching layer, the device comprising:
- processing circuitry configured to:
- control provision of a precursor to a reaction chamber, thereby exposing the substrate to dispose precursor particles on at least a sidewall of a recess in the etching layer;
- control gas sources to supply an inhibitor gas and a modification gas to the reaction chamber to generate a plasma;
- and
- control a radio frequency (RF) source to provide RF to modify the precursor particles on the sidewall into a protective film on the sidewall of the recess while the inhibitor gas and the modification gas are supplied in the reaction chamber.
Dependencies are inferred from the claim text.