Atomic Layer Deposition Using A Substrate Scanning System
AssigneeApplied Materials, Inc.
InventorGlen F R Gilchrist
Life of this patent
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Abstract
An apparatus and method of processing a workpiece is disclosed, where a coating is applied to a workpiece and the workpiece is subsequently subjected to an etching process. These processes are performed by one semiconductor processing apparatus while the workpiece is scanned relative to the apparatus. A precursor is applied to the workpiece by the apparatus. The apparatus then uses plasma, heat or ultraviolet radiation to activate the precursor to form a coating. After the coating is applied, the apparatus is configured to perform the etching process. In certain embodiments, the etching process is a directional etching process.
Claims17
A method of performing a one-dimensional etching process using exactly one semiconductor processing apparatus, comprising:
- applying a precursor to a workpiece using the semiconductor processing apparatus while the workpiece is being scanned relative to the semiconductor processing apparatus;
- activating the precursor using plasma, heat or ultraviolet radiation while the workpiece is being scanned relative to the semiconductor processing apparatus to form a coating;
- performing a directional etching process while the workpiece is being scanned, where the coating is etched faster in one dimensional than in an orthogonal direction;
- and
- stopping the directional etching process when the coating has been etched away.
A semiconductor processing apparatus, comprising:
- an ion source, comprising:
- an ion source chamber, having an extraction plate comprising an extraction aperture;
- an antenna proximate one or more walls of the ion source chamber;
- a RF power supply in communication with the antenna;
- a gas container to hold a gas;
- an ion source mass flow controller disposed between the gas container and the ion source chamber to regulate flow of gas from the gas container;
- one or more showerheads disposed on the extraction plate proximate the extraction aperture;
- a reservoir;
- and
- one or more showerhead mass flow controllers disposed between the reservoir and a respective showerhead to regulate a flow of fluid from the reservoir through the showerhead;
- a movable workpiece holder, comprising:
- a platen to hold a workpiece;
- and
- a scan motor to move the platen;
- and
- a controller, wherein the controller is configured to:
- actuate the scan motor such that the workpiece is scanned past the extraction aperture;
- apply a precursor to the workpiece by actuating the showerhead mass flow controllers when the workpiece is proximate the showerheads;
- activate the precursor;
- and
- perform an etching process by:
- actuating the ion source mass flow controllers to allow a flow of an etching species into the ion source chamber;
- actuating the RF power supply to energize the etching species into a plasma;
- and
- creating a voltage difference between the ion source chamber and the platen to attract ions from the plasma to the workpiece.
A semiconductor processing apparatus, comprising:
- an ion source, comprising:
- an ion source chamber, having an extraction plate comprising an extraction aperture;
- an antenna proximate one wall of the ion source chamber;
- a RF power supply in communication with the antenna;
- a gas container to hold a gas;
- an ion source mass flow controller disposed between the gas container and the ion source chamber to regulate flow of gas from the gas container;
- heating elements disposed proximate the extraction aperture;
- a heater power supply;
- a movable workpiece holder, comprising:
- a platen to hold a workpiece;
- and
- a scan motor to move the platen;
- and
- a controller, wherein the controller is configured to:
- actuate the scan motor such that the workpiece is scanned past the extraction aperture;
- apply a precursor to the workpiece by actuating the ion source mass flow controllers when the workpiece is proximate the extraction aperture such that precursor emanates from the extraction plate;
- activate the precursor by actuating the heater power supply, such that heat from the heating elements activates the precursor;
- and
- perform an etching process by:
- actuating the ion source mass flow controllers to allow a flow of an etching species into the ion source chamber;
- actuating the RF power supply to energize the etching species into a plasma;
- and
- creating a voltage difference between the ion source chamber and the platen to attract ions from the plasma to the workpiece.
Dependencies are inferred from the claim text.