Method and system for forming patterned structures using multiple patterning process
AssigneeASM IP Holding B.V.
InventorsNaoki Inoue, Ryu Nakano, Shinya Yamada, Mao Tsuchiya
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Abstract
Methods of forming patterned structures suitable for a multiple patterning process are disclosed. Exemplary methods include forming a layer overlying the substrate by providing a precursor to the reaction chamber for a precursor pulse period, providing a reactant to the reaction chamber for a reactant pulse period, applying a first plasma power having a first frequency (e.g., less than 1 MHz) for a first plasma power period, and optionally applying a second plasma power having a second frequency for a second plasma power period, wherein the first frequency is different than the second frequency.
Claims26
A method of forming patterned structures using a multiple patterning process, the method comprising the steps of:
- providing a substrate within a reaction chamber, the substrate comprising a surface comprising patterned features;
- and
- forming a layer overlying the substrate, wherein the step of forming the layer comprises:
- providing a precursor to the reaction chamber for a precursor pulse period;
- providing a reactant to the reaction chamber for a reactant pulse period;
- applying a first plasma power having a first frequency less than 1 MHz for a first plasma power period;
- and
- optionally applying a second plasma power having a second frequency for a second plasma power period,
- wherein the first frequency is different than the second frequency.
A system comprising:
- one or more reaction chambers;
- a precursor source line;
- a reactant source line;
- a first plasma power source having a first frequency;
- a second plasma power source having a first frequency;
- an exhaust source;
- and
- a controller,
- wherein the controller is configured to control gas flow of a precursor and a reactant into at least one of the one or more reaction chambers to form a layer overlying a substrate,
- wherein the controller is further configured to provide the first plasma power and optionally the second plasma power within the at least one reaction chamber, and
- wherein a first frequency of the first plasma power is different than a second frequency of the second plasma power.
Dependencies are inferred from the claim text.