Low stress films for advanced semiconductor applications

A semiconductor device, comprising:

• a 3D NAND structure having alternating oxide and nitride or polysilicon layers in a staircase pattern;
• a doped silicon oxide film disposed and annealed on the staircase pattern, the film having a thickness of at least 5 μm;
• wherein the doped silicon oxide film is doped with a dopant selected from the group consisting of B, P, Ge, and combinations thereof;
• and
• wherein the doped silicon oxide film disposed and annealed on the staircase pattern exhibits substantially zero as-deposited stress, substantially zero stress shift post-anneal, and substantially zero shrinkage post-anneal.

An apparatus for processing substrates, the apparatus comprising:

• a process chamber having a chuck;
• a gas source connected with the process chambers and associated flow-control hardware;
• and
• substrate handling hardware;
• a controller having a processor and a memory, wherein
• the processor and the memory are communicatively connected with one another,
• the processor is at least operatively connected with the flow-control and substrate handling hardware, and
• the memory stores computer-executable instructions for controlling the processor to at least control the flow-control hardware and substrate handling hardware by:
• providing a patterned semiconductor substrate;
• depositing on a patterned semiconductor substrate disposed in the chamber a doped silicon oxide film having a thickness of at least 5 μm;
• and
• annealing the doped silicon oxide film to a temperature above the film glass transition temperature.