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US 2022/0068629 A1Published application
Substrate processing method and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorTakayuki KATSUNUMA
Life of this patent
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Abstract
A substrate processing method includes step (a) of adsorbing a precursor on a side wall surface of a substrate where the side wall surface defines a recess in the substrate. The substrate processing method further includes step (b) of supplying a first chemical species and a second chemical species to the substrate. The first chemical species forms a film from the precursor on the side wall surface, and the second chemical species suppresses an increase of the thickness of the film. Steps (a) and (b) are alternately repeated.
Claims17
A substrate processing method comprising:
- (a) adsorbing a precursor to a side wall surface of a substrate, the side wall surface defining a recess in the substrate;
- and
- (b) supplying a first chemical species and a second chemical species to the substrate, the first chemical species forming a film from the precursor on the side wall surface and the second chemical species suppressing an increase of a thickness of the film,
- wherein (a) and (b) are alternately repeated.
1 more element
A plasma processing apparatus comprising:
- a chamber;
- a gas supply configured to supply a precursor gas, a first gas, and a second gas into the chamber;
- a plasma generator configured to generate plasma from the first gas and the second gas;
- and
- a controller configured to control the gas supply and the plasma generator, wherein the controller is configured to perform a process including:
- (a) controlling the gas supply to supply the precursor gas into the chamber, thereby adsorbing a precursor contained in the precursor gas on a side wall surface of a substrate;
- and
- (b) controlling the gas supply and the plasma generator to generate plasma from the first gas and the second gas in the chamber, thereby generating a first chemical species that forms a film from the precursor on the side wall surface from the first gas, and a second chemical species that suppresses an increase in a thickness of the film from the second gas, and
- alternately repeating (a) and (b).
6 more elements
Dependencies are inferred from the claim text.