Plasma processing apparatus and method for dechucking wafer in the plasma processing apparatus

A plasma process apparatus comprising:

• a chamber in which a plasma process is performed;
• an electrostatic chuck which supports a wafer inside the chamber and comprises a first portion and a second portion disposed on the first portion, a width of the first portion in a first direction being greater than a width of the second portion in the first direction;
• first and second electrodes disposed apart from each other inside the second portion of the electrostatic chuck;
• a focus ring which surrounds side walls of the second portion of the electrostatic chuck and at least partially overlaps the first portion of the electrostatic chuck in a vertical direction;
• and
• a junction portion disposed between the first portion of the electrostatic chuck and the focus ring, and comprising a first layer and a second layer disposed on the first layer, the second layer including a metal,
• wherein a first thickness of the first layer in the vertical direction is 60 μm to 350 μm, and a second thickness of the second layer in the vertical direction is 30 μm to 70 μm.

A method for dechucking a wafer in a plasma process apparatus, the method comprising:

• loading the wafer onto an electrostatic chuck disposed inside a chamber;
• performing a plasma process on the wafer;
• cutting off a power supply of a second electrode disposed at an edge portion of the electrostatic chuck;
• dechucking an edge portion of the wafer located on the second electrode;
• cutting off the power supply of a first electrode disposed at a central portion of the electrostatic chuck and spaced apart from the second electrode;
• and
• dechucking a central portion of the wafer located on the first electrode.