Gas Cluster Assisted Plasma Processing
AssigneeTokyo Electron Limited
InventorsPeter Ventzek, Alok Ranjan
Life of this patent
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Abstract
A method for processing a substrate includes forming a patterned layer over the substrate, the layer including an opening, where a surface of the opening includes a sidewall and a bottom wall. The method includes processing the patterned layer with an anisotropic process by generating a flux of gas clusters over the substrate in a first process chamber, where the gas clusters include radical precursors; exposing the substrate to the flux of gas clusters. The method includes sustaining plasma including ions in a second process chamber; and exposing the substrate to the ions by directing the ions toward the bottom wall of the opening.
Claims21
A method for processing a substrate, the method comprising:
- forming a patterned layer over the substrate, the layer comprising an opening, wherein a surface of the opening comprises a sidewall and a bottom wall;
- processing the patterned layer with an anisotropic process by
- generating a flux of gas clusters over the substrate in a first process chamber, wherein the gas clusters comprise radical precursors;
- exposing the substrate to the flux of gas clusters;
- sustaining plasma comprising ions in a second process chamber;
- and
- exposing the substrate to the ions by directing the ions toward the bottom wall of the opening.
A system for processing a substrate, the system comprising:
- a first subsystem comprising:
- a plenum comprising a gas inlet;
- a nozzle assembly comprising a plurality of nozzles, wherein an intake aperture of each of the plurality of nozzles is disposed inside the plenum;
- and
- a gas cluster process chamber connected to the plenum through the plurality of nozzles of the nozzle assembly;
- and
- a gas flow system connected to the gas inlet and a gas outlet of the gas cluster process chamber, wherein the gas flow system is configured to generate a flux of gas clusters in the gas cluster process chamber;
- and
- a second subsystem comprising:
- a plasma process chamber;
- and
- a power source for powering a plasma in the plasma process chamber.
A system for processing a substrate, the system comprising:
- a plenum;
- a substrate processing chamber disposed outside the plenum and configured to sustain a plasma;
- a nozzle having an intake aperture coupled to the plenum and an exit aperture coupled to the substrate processing chamber.
Dependencies are inferred from the claim text.